For2ensics Project

The project FOR2ENSiCS aims at the design, fabrication and testing of 15 kV SiC IGBTs modules. The choice of the device technology is based on previous studies, which point towards a break-even voltage between SiC MOSFET and SiC IGBT just above 10 kV. Highly relevant, both cost and environmental impact reduction of the fabrication processes will be targeted, using novel approaches for material growth and semiconductor processing. At the same time, another major target of the project is to understand reliability issues affecting different converter components such as UHV switching devices, passive components, and medium frequency transformer associated with high switching frequency and high voltage environment.